Micron advances semiconductor R&D capabilities
New facility to play crucial role in vendor’s research into breakthrough memory technology
Micron recently opened a new facility which will play a critical role in the company's research into breakthrough new memory and storage technologies of the future.
When fully equipped, the new building will nearly double Micron's cleanroom space dedicated to research and development in the US, and will support a significant expansion of the company's overall R&D capabilities.
Micron said the expanded facility is the focal point for developing new semiconductor manufacturing processes and designs for the company's future memory and storage technologies.
Sanjay Mehrotra, president and CEO, Micron, said: "Creating the world's most advanced semiconductors is a highly complex process. The work done by our industry-leading team of scientists and engineers will help shape tomorrow's technologies, products and solutions including future generations of phones, vehicles, and data centres, and advance rapidly emerging trends such as artificial intelligence and big data analytics.
He added that the accomplishment of the company's R&D clean-room space marks a significant acceleration of the innovation capabilities the company is pushing.
Scott DeBoer, technology development executive vice president, Micron said construction of the new clean-room facility began in October 2015 to create an expanded pristine, precision-controlled environment for development and fabrication of advanced memory integrated circuits leveraging Micron's years of deep technical expertise and innovation capability.
DeBoer said Micron's DRAM technology has now transitioned from the US R&D and into Micron's production fab in Japan. "Over the past year, the R&D team has also successfully completed the development process in the US facility for 64-layer 3D NAND, and moved the technology from initial development all the way through to volume production in Micron's Singapore fabs," he said.