SanDisk announces 15 nanometer technology
‘World’s most advanced’ NAND flash process node now available
Flash storage specialist SanDisk Corporation today announced the availability of its 1Z-nanometer (nm) technology, which it described as "the most advanced NAND flash process node in the world".
The 15nm technology will ramp on both two bits-per-cell (X2) and three bits-per-cell (X3) NAND flash memory architectures with production ramp to begin in the second half of 2014.
"We are thrilled to continue our technology leadership with the industry's most advanced flash memory process node, enabling us to deliver the world's smallest and most cost effective 128 gigabit chips," said Dr Siva Sivaram, senior vice president, memory technology, SanDisk.
"We are delighted that these new chips will allow us to further differentiate and expand our portfolio of NAND flash solutions."
The 15nm technology uses a series of process enhancements and cell-design solutions to scale the chips along both axes. SanDisk's All-Bit-Line (ABL) architecture, which contains proprietary algorithms and multi-level data storage management schemes, has been implemented in the 1Z technology to deliver NAND flash solutions with "no sacrifice in memory performance or reliability", according to a statement from the company.
SanDisk said its 1Z technology will be integrated across its range of solutions, from removable cards to enterprise SSDs.