Toshiba: The flash revolution

In a Special Report, Network Middle East delves into the greatest innovation in IT storage, and the company that started it all.

Tags: Toshiba Gulf FZE (toshibamea.com/)
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Toshiba: The flash revolution The Toshiba Yokkaichi factory in Japan where the 96 –layer BiCS FLASH is manufactured.
By  David Ndichu Published  September 10, 2018

The company that revolutionised storage continues to lead in innovation in the space.

Around 1980, Fujio Masuoka, while working for Toshiba, invented Flash memory technology, heralding a new era in which we are all able to carry videos, music and data with us wherever we go. Four years later, Toshiba brought its first flash memory product to market.

Since then, it has been a series of industry-firsts.

In 1987, Toshiba launched the next generation of flash memory, NAND flash, a medium that has since been used in a variety of memory cards and electronic equipment. In 1991, Toshiba developed the world's first 4-megabit (Mb) NAND-type Electrically Erasable and Programmable Read-only Memory (EEPROM).  

In 2010, Toshiba launched the industry's largest embedded NAND Flash memory modules. (A stack of sixteen 64Gb NAND chips are used in Toshiba's 128GB e-MMC module). One year later, the company launched 19nm process NAND flash memory - the world's finest process yet achieved yields single chips with a 64 Gb capacity.

Then this year, Toshiba announced arguably the biggest breakthrough in flash since introducing the technology 37 years ago-it developed a prototype sample of a 96-layer BiCS FLASHTM, a memory device using its proprietary 3D flash quad level cell (QLC) technology that boosts single-chip memory capacity to the highest level yet achieved.  

In this special report, Network Middle East highlights Toshiba’s flash technology breakthroughs and how the company is leading the industry into the future.

Read the special report here:   

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