Samsung begins mass producing 4GB DRAM

New memory is based on newest high bandwidth memory interface

Tags: Samsung Electronics Company
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Samsung begins mass producing 4GB DRAM Samsung will steadily increase production volume of its HBM2 DRAM over the remainder of the year to meet anticipated growth.
By  Manda Banda Published  February 14, 2016

Samsung Electronics Co Ltd, recently announced it has begun mass producing the industry's first 4GB DRAM package based on the second-generation high bandwidth memory (HBM2) interface, for use in high performance computing (HPC), advanced graphics and network systems, and enterprise servers.

Samsung's new HBM solution will offer unprecedented DRAM performance more than seven times faster than the current DRAM performance limit, allowing faster responsiveness for high-end computing tasks including parallel computing, graphics rendering and machine learning.

"By mass producing next-generation HBM2 DRAM, we can contribute much more to the rapid adoption of next-generation HPC systems by global IT companies," said Sewon Chun, senior vice president, Memory Marketing, Samsung Electronics. "Also, in using our 3D memory technology here, we can more proactively cope with the multifaceted needs of global IT, while at the same time strengthening the foundation for future growth of the DRAM market."

The newly introduced 4GB HBM2 DRAM, which uses Samsung's most efficient 20-nanometer process technology and advanced HBM chip design, satisfies the need for high performance, energy efficiency, reliability and small dimensions making it well suited for next-generation HPC systems and graphics cards.

Following Samsung's introduction of a 128GB 3D TSV DDR4 registered dual inline memory module (RDIMM) in October 2015, the new HBM2 DRAM marks the latest milestone in through silicon via (TSV) DRAM technology.

The 4GB HBM2 package is created by stacking a buffer die at the bottom and four 8-gigabit core dies on top. These are then vertically interconnected by TSV holes and microbumps. A single 8GB HBM2 die contains over 5,000 TSV holes, which is more than 36 times that of a 8GB TSV DDR4 die, offering a DRAMatic improvement in data transmission performance compared to typical wire-bonding based packages.


The company will steadily increase production volume of its HBM2 DRAM over the remainder of the year to meet anticipated growth in market demand for network systems and servers. Samsung will also expand its line-up of HBM2 DRAM solutions to stay ahead in the high-performance computing market and extend its lead in premium memory production.

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